GE Research: 1.2kV Class SiC MOSFETs with Improved Performance over Wide Operating Temperature
Advances in material quality and availability, device development and fabrication process maturity has pushed SiC MOSETs to the brink of adoption in a range of power electronics applications such as renewables/solar, transportation and aviation industries where size and weight reduction, increased functionality and reduced bill-of-materials cost are being realizable. While SiC MOSFET entitled performance benefits versus incumbent IGBTs have been widely reported, acceptance has been limited due to increased die cost and limited reliability data presented to date.
Utilization of SiC MOSFET body diode in hard switching applications.
Tremendous progress has been made on SiC MOSFETs in the last few years. High voltage SiC devices offer the promise of efficient power conversion in areas that current silicon-based power semiconductors do not. System benefits such as improved efficiency, reduced part count, reduced size and weight will make this technology attractive for adoption in a variety of power conversion systems. In SiC MOSFETs, the intrinsic body diode may be used as the anti-parallel diode. When the diode is implemented in silicon, the reverse recovery of such diodes results in high switching losses. In applications utilizing IGBTs this has led to the use of SiC Schottky diodes in cases where performance outweighs cost. On the other hand the use of the SiC MOSFET body diode could provide significant cost and size benefits.
About GE Research:
GE Research offers reliability testing of power semiconductor devices. Our in-depth expertise in high temperature and high voltage testing, environmental testing, failure analysis, root cause determination, and mitigation solutions enables us to fully characterize and analyze the performance of your parts. Due to our extensive industry experience with SiC, we also have significant know-how in SiC MOSFET reliability testing with equipment and tooling tailored for higher temperature SiC discrete and module packages.
GE Research Success:
Everyone needs to periodically collect reliability data on their WBG devices, but this can be quite expensive and labor intensive to do in-house. Many would be well served by contracting from an experienced supplier well versed in GaN and SiC devices. That’s where GE Research can help.
The team at GE Research and elsewhere have been developing semiconductors that can withstand high operating temperatures of 200 degrees Celsius and beyond. GE began developing SiC MOSFETs (metal-oxide semiconductor field-effect transistors) decades ago and achieved the strict standards required by the automotive industry. GE is a recognized leader in industrial applications and since 2015 GE Research has provided production SiC MOSFETs and power modules for GE Aviation products. In addition, the team has been expanding its application base to automotive, healthcare, renewable energy and the military.
Now, GE’s lab outside of Albany NY, and the technologists that run them, are open and available to take on the gamut of WBG reliability test requirements:
Initial consultation, and reliability test planning to determine the scope of work
Data analysis, consultation and reporting
Take a look at the attached PDF which details the wide scope of reliability test services available. Let us know if you want to explore this further.
About E Test Reps:
ETR is a sales representative and marketing firm based in Austin, TX serving a world wide customer base. We seek out principals that avoid surprises while delivering ontime solutions that give customers more than they expect.